Electronic instability in a zero-gap semiconductor: the charge-density wave in (TaSe4)2I.

نویسندگان

  • C Tournier-Colletta
  • L Moreschini
  • G Autès
  • S Moser
  • A Crepaldi
  • H Berger
  • A L Walter
  • K S Kim
  • A Bostwick
  • P Monceau
  • E Rotenberg
  • O V Yazyev
  • M Grioni
چکیده

We report a comprehensive study of the paradigmatic quasi-1D compound (TaSe(4))(2)I performed by means of angle-resolved photoemission spectroscopy (ARPES) and first-principles electronic structure calculations. We find it to be a zero-gap semiconductor in the nondistorted structure, with non-negligible interchain coupling. Theory and experiment support a Peierls-like scenario for the charge-density wave formation below T(CDW)=263  K, where the incommensurability is a direct consequence of the finite interchain coupling. The formation of small polarons, strongly suggested by the ARPES data, explains the puzzling semiconductor-to-semiconductor transition observed in transport at T(CDW).

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عنوان ژورنال:
  • Physical review letters

دوره 110 23  شماره 

صفحات  -

تاریخ انتشار 2013